smcj5.0 thru smcj188ca vishay general semiconductor document number: 88394 revision: 21-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 surface mount t rans z orb ? transient voltage suppressors features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in uni-directional and bi-directional ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-214ab (smcj) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade base p/nhe3 - rohs co mpliant, high reliability/ automotive grade (aec q101 qualified) terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: for uni-directional types the band denotes cathode end, no marking on bi-directional types devices for bi-direction applications for bi-directional devices use c or ca suffix (e.g. smcj188ca). electrical characteristics apply in both directions. primary characteristics v wm 5.0 v to 188 v p ppm 1500 w p d 6.5 w i fsm (uni-directional only) 200 a t j max. 150 c do-214ab (smc) notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipatio n with a 10/1000 s waveform (1)(2) p ppm 1500 w peak pulse current with a 10/1000 s waveform (1) i ppm see next table a peak forward surge current 8.3 ms si ngle half sine-wave uni-directional only (2) i fsm 200 a power dissipation on in finite heatsink, t a = 50 c p d 6.5 w operating junction and storage temperature range t j , t stg - 55 to + 150 c
smcj5.0 thru smcj188ca vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88394 revision: 21-oct-08 2 electrical characteristics (t a = 25 c unless otherwise noted) device type modified ?j? bend lead device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) uni bi min. max. (+) smcj5.0 gdd gdd 6.40 7.82 10.0 5.0 1000 156.3 9.6 (+) smcj5.0a (5) gde gde 6.40 7.07 10.0 5.0 1000 163.0 9.2 (+) smcj6.0 gdf gdf 6.67 8.15 10.0 6.0 1000 131.6 11.4 (+) smcj6.0a gdg gdg 6.67 7.37 10.0 6.0 1000 145.6 10.3 (+) smcj6.5 gdh bdh 7.22 8.82 10.0 6.5 500 122.0 12.3 (+) smcj6.5a gdk bdk 7.22 7.98 10.0 6.5 500 133.9 11.2 (+) smcj7.0 gdl gdl 7.78 9.51 10.0 7.0 200 112.8 13.3 (+) smcj7.0a gdm gdm 7.78 8.60 10.0 7.0 200 125.0 12.0 (+) smcj7.5 gdn bdn 8.33 10.2 1.0 7.5 100 104.9 14.3 (+) smcj7.5a gdp bdp 8.33 9.21 1.0 7.5 100 116.3 12.9 (+) smcj8.0 gdq bdg 8.89 10.9 1.0 8.0 50 100.0 15.0 (+) smcj8.0a gdr bdr 8.89 9.83 1.0 8.0 50 110.3 13.6 (+) smcj8.5 gds bds 9.44 11.5 1.0 8.5 20 94.3 15.9 (+) smcj8.5a gdt bdt 9.44 10.4 1.0 8.5 20 104.2 14.4 (+) smcj9.0 gdu bdu 10.0 12.2 1.0 9.0 10 88.8 16.9 (+) smcj9.0a gdv bdv 10.0 11.1 1.0 9.0 10 97.4 15.4 (+) smcj10 gdw bdw 11.1 13.6 1.0 10 5.0 79.8 18.8 (+) smcj10a gdx bdx 11.1 12.3 1.0 10 5.0 88.2 17.0 (+) smcj11 gdy gdy 12.2 14.9 1.0 11 5.0 74.6 20.1 (+) smcj11a gdz gdz 12.2 13.5 1.0 11 5.0 82.4 18.2 (+) smcj12 ged bed 13.3 16.3 1.0 12 5.0 68.2 22.0 (+) smcj12a gee bee 13.3 14.7 1.0 12 5.0 75.4 19.9 (+) smcj13 gef gef 14.4 17.6 1.0 13 1.0 63.0 23.8 (+) smcj13a geg geg 14.4 15.9 1.0 13 1.0 69.8 21.5 (+) smcj14 geh beh 15.6 19.1 1.0 14 1.0 58.1 25.8 (+) smcj14a gek bek 15.6 17.2 1.0 14 1.0 64.7 23.2 (+) smcj15 gel bel 16.7 20.4 1.0 15 1.0 55.8 26.9 (+) smcj15a gem bem 16.7 18.5 1.0 15 1.0 61.5 24.4 (+) smcj16 gen gen 17.8 21.8 1.0 16 1.0 52.1 28.8 (+) smcj16a gep gep 17.8 19.7 1.0 16 1.0 57.7 26.0 (+) smcj17 geq geq 18.9 23.1 1.0 17 1.0 49.2 30.5 (+) smcj17a ger ger 18.9 20.9 1.0 17 1.0 54.3 27.6 (+) smcj18 ges bes 20.0 24.4 1.0 18 1.0 46.6 32.2 (+) smcj18a get bet 20.0 22.1 1.0 18 1.0 51.4 29.2 (+) smcj20 geu beu 22.2 27.1 1.0 20 1.0 41.9 35.8 (+) smcj20a gev bev 22.2 24.5 1.0 20 1.0 46.3 32.4 (+) smcj22 gew bew 24.4 29.8 1.0 22 1.0 38.1 39.4 (+) smcj22a gex bex 24.4 26.9 1.0 22 1.0 42.3 35.5 (+) smcj24 gey bey 26.7 32.6 1.0 24 1.0 34.9 43.0 (+) smcj24a gez bez 26.7 29.5 1.0 24 1.0 38.6 38.9 (+) smcj26 gfd bfd 28.9 35.3 1.0 26 1.0 32.2 46.6 (+) smcj26a gfe bfe 28.9 31.9 1.0 26 1.0 35.6 42.1 (+) smcj28 gff bff 31.1 38.0 1.0 28 1.0 30.0 50.0 (+) smcj28a gfg bfg 31.1 34.4 1.0 28 1.0 33.0 45.4 (+) smcj30 gfh bfh 33.3 40.7 1.0 30 1.0 28.0 53.5 (+) smcj30a gfk bfk 33.3 36.8 1.0 30 1.0 31.0 48.4 (+) smcj33 gfl bfl 36.7 44.9 1.0 33 1.0 25.4 59.0 (+) smcj33a gfm bfm 36.7 40.6 1.0 33 1.0 28.1 53.3 (+) smcj36 gfn bfn 40.0 48.9 1.0 36 1.0 23.3 64.3 (+) smcj36a gfp bfp 40.0 44.2 1.0 36 1.0 25.8 58.1 (+) smcj40 gfq bfq 44.4 54.3 1.0 40 1.0 21.0 71.4 (+) smcj40a gfr bfr 44.4 49.1 1.0 40 1.0 23.3 64.5
smcj5.0 thru smcj188ca vishay general semiconductor document number: 88394 revision: 21-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 notes: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) for bi-directi onal types having v wm of 10 v and less, the i d limit is doubled (4) all terms and symbols are consis tent with ansi/ieee c62.35 (5) for the bi-directional smcj5.0ca, the maximum v br is 7.25 v (6) v f = 3.5 v at i f = 100 a (uni-directional only) (+) underwriters laboratory recognition for t he classification of pr otectors (qvgq2) under the ul standard for safety 497b and f ile number e136766 for both uni-directional and bi-directional devices (+) smcj43 gfs bfs 47.8 58.4 1.0 43 1.0 19.6 76.7 (+) smcj43a gft bft 47.8 52.8 1.0 43 1.0 21.6 69.4 (+) smcj45 gfu gfu 50.0 61.1 1.0 45 1.0 18.7 80.3 (+) smcj45a gfv gfv 50.0 55.3 1.0 45 1.0 20.6 72.7 (+) smcj48 gfw gfw 53.3 65.1 1.0 48 1.0 17.5 85.5 (+) smcj48a gfx gfx 53.3 58.9 1.0 48 1.0 19.4 77.4 (+) smcj51 gfy gfy 56.7 69.3 1.0 51 1.0 16.5 91.1 (+) smcj51a gfz gfz 56.7 62.7 1.0 51 1.0 18.2 82.4 (+) smcj54 ggd ggd 60.0 73.3 1.0 54 1.0 15.6 96.3 (+) smcj54a gge gge 60.0 66.3 1.0 54 1.0 17.2 87.1 (+) smcj58 ggf ggf 64.4 78.7 1.0 58 1.0 14.6 103 (+) smcj58a ggg ggg 64.4 71.2 1.0 58 1.0 16.0 93 (+) smcj60 ggh ggh 66.7 81.5 1.0 60 1.0 14.0 107 (+) smcj60a ggk ggk 66.7 73.7 1.0 60 1.0 15.5 96 (+) smcj64 ggl ggl 71.1 86.9 1.0 64 1.0 13.2 114 (+) smcj64a ggm ggm 71.1 78.6 1.0 64 1.0 14.6 103 (+) smcj70 ggn ggn 77.8 95.1 1.0 70 1.0 12.0 125 (+) smcj70a ggp ggp 77.8 86.0 1.0 70 1.0 13.3 113 (+) smcj75 ggq ggq 83.3 102 1.0 75 1.0 11.2 134 (+) smcj75a ggr ggr 83.3 92.1 1.0 75 1.0 12.4 121 (+) smcj78 ggs ggs 86.7 106 1.0 78 1.0 10.8 139 (+) smcj78a ggt ggt 86.7 95.8 1.0 78 1.0 11.9 126 (+) smcj85 ggu ggu 94.4 115 1.0 85 1.0 9.9 151 (+) smcj85a ggv ggv 94.4 104 1.0 85 1.0 10.9 137 (+) smcj90 ggw ggw 100 122 1.0 90 1.0 9.4 160 (+) smcj90a ggx ggx 100 111 1.0 90 1.0 10.3 146 (+) smcj100 ggy ggy 111 136 1.0 100 1.0 8.4 179 (+) smcj100a ggz ggz 111 123 1.0 100 1.0 9.3 162 (+) smcj110 ghd ghd 122 149 1.0 110 1.0 7.7 196 (+) smcj110a ghe ghe 122 135 1.0 110 1.0 8.5 177 (+) smcj120 ghf ghf 133 163 1.0 120 1.0 7.0 214 (+) smcj120a ghg ghg 133 147 1.0 120 1.0 7.8 193 (+) smcj130 ghh ghh 144 176 1.0 130 1.0 6.5 231 (+) smcj130a ghk ghk 144 159 1.0 130 1.0 7.2 209 (+) smcj150 ghl ghl 167 204 1.0 150 1.0 5.6 268 (+) smcj150a ghm ghm 167 185 1.0 150 1.0 6.2 243 (+) smcj160 ghn ghn 178 218 1.0 160 1.0 5.2 287 (+) smcj160a ghp ghp 178 197 1.0 160 1.0 5.8 259 (+) smcj170 ghq ghq 189 231 1.0 170 1.0 4.9 304 (+) smcj170a ghr ghr 189 209 1.0 170 1.0 5.5 275 smcj188 ght ght 209 255 1.0 188 1.0 4.4 344 smcj188a ghs ghs 209 231 1.0 188 1.0 4.6 328 electrical characteristics (t a = 25 c unless otherwise noted) device type modified ?j? bend lead device marking code breakdown voltag e v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) uni bi min. max.
smcj5.0 thru smcj188ca vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88394 revision: 21-oct-08 4 note: (1) mounted on minimum recommended pad layout note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient air (1) r ja 75 c/w typical thermal resistance, junction to leads r jl 15 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode smcj5.0a-e3/57t 0.211 57t 850 7" diameter plastic tape and reel smcj5.0a-e3/9at 0.211 9at 3500 13" diameter plastic tape and reel smcj5.0ahe3/57t (1) 0.211 57t 850 7" diameter plastic tape and reel smcj5.0ahe3/9at (1) 0.211 9at 3500 13" diameter plastic tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 0.1 1 10 100 0.31 x 0.31" ( 8 .0 x 8 .0 mm) copper pad areas p ppm - peak p u lse po w er (k w ) t d - p u lse w idth (s) 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms 0 255075100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance uni-directional 0 50 100 150 t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 t d 10/1000 s w a v eform as defined b y r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) i ppm - peak p u lse c u rrent, % i rsm t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 10 000 20 000 10 1 100 400 uni-directional bi-directional t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at zero bias v r , meas u red at stand-off v oltage v w m c j - j u nction capacitance (pf) v w m - re v erse stand-off v oltage ( v )
smcj5.0 thru smcj188ca vishay general semiconductor document number: 88394 revision: 21-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 5 package outline dimensions in inches (millimeters) figure 5. typical transient thermal impedance 0.1 1.0 10 100 0.001 0.01 0.1 10 1 100 1000 t p - p u lse d u ration (s) transient thermal impedance (c/ w ) figure 6. maximum non-repetitive forward surge current uni-directional use only 1 10 100 10 100 200 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 0.260 (6.60) 0.2 8 0 (7.11) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.2) 0.305 (7.75) 0.320 ( 8 .13) 0.220 (5.59) 0.246 (6.22) 0.079 (2.06) 0.103 (2.62) 0.114 (2.90) 0.126 (3.20) cathode band do-214ab (smc j-bend) 0.320 ref. 0.060 (1.52) mi n . mountin g pad layout 0 (0) 0.126 (3.20) mi n . 0.1 8 5 (4.69) max.
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